Technologies
Know-Hows
Distr@l (02.2023 - running)
In this project, the Hessian Distr@l program supports the further development and validation of GaN-based terahertz sources with a duration of 2 years with about 700 000 €.
Pioneer Fund (08.2017 - 03.2019)
The university-internal funding program Pioneer Fund aims to increase TU Darmstadt’s capacity for Innovation. The Pioneer Fund finances these development- and validation activities in projects with a duration of 18 months with about 135,000 €.
THz Gunn Diodes
THzNanoVision develops compact, patented sources for the generation and use of Terahertz (THz) waves in order to create the basis for a cross-sectional technology in the field of data transmission in the long term. THzNanoVision's core innovation is its patented semiconductor technologies that enable the development of biocompatible, low-cost, high-performance, as well as easy-to-install THz sources that are nearly impossible to achieve with current technologies.
THz Schottky Diodes
In many applications in the field of sensor and imaging technologies, small and high sensitive Terahertz (THz) detectors are required to detect the broad band electromagnetic radiation. For the envisaged frequency range between 100 GHz to 3 THz, THzNanoVision develops compact and cost-effective THz detectors. The THz detectors based on InGaAs and GaAs Schottky Diodes will fill this gap and help the THz radiation to become a breakthrough technology especially for the spectroscopic and imaging applications.
THz Systems and Applications
In a first application area for non-destructive imaging, we build THz systems in the frequency range from 100 GHz to 700 GHz using our patented technologies. The application of our technology here offers imaging inspection of defects in the millimeter and submillimeter range and products, components and raw materials can be screened non-destructively. Our highly innovative THz source enables fast, non-contact and non-destructive material inspection and can check 100% of the quality of products in production lines. For this purpose, THzNanoVision already has several letters of intent from companies for future cooperation or demand for our diodes. Further companies are planning to integrate our sources in their non-destructive material testing or radar systems in the mid-term. These cooperations would enable us to significantly expand our application and sales channels also in the direction of telecommunications and at the same time provide for an additional, very high scalability of our business model. THzNanoVision's novel THz devices can be generally applied in the fields of telecommunications, non-destructive material testing, and drug or food inspection. The application fields can be extended to biomedical engineering as well as security engineering. The unique value of our THz technology lies in its differentiation from hazardous alternatives such as X-ray and UV technology, as it is biocompatible and safe for human health.
Planned scope of applications
Non-destructive material testing
Similar to ultrasonic radiation, the THz radiation is reflected on boundary layers and therefore allows, for example, to determine delamination in integrated circuits as well as quality control of weld seams. Due to the high THz output level of the GaN Gunn Diode it becomes possible to detect direct inline-quality control hidden and deep lying structural damages for quality control of plastic and composite materials.
Communication and Radar
Our technologies allow in the long term wireless communication with the highest bit-rate data transmission over short distances (so-called last mile). The aim is to apply our technology in places where broadband expansion with fiber optic networks is difficult and should also enable the basis for further applications in the area of 6G data transmission and subsequent generations in the future.
Bio-medical applications
In bio-medicine, THz radiation can be used to detect changes of the H2O concentration in human tissue. By this, healthy tissue can be differentiated from diseased tissue. The combination multiple GaN Gunn Diodes for different frequencies allows to determine spectral information for freshness-control of packaged food.
Gas and molecular sensors
Polar molecules show characteristic absorption spectra in the THz area. By means of combination of multiple Gunn Diodes, which are exactly tuned to the absorption maxima of selected molecules, cost-effective detectors for selected critical substances (e.g. gases, drugs, biomolecules) can be provided.
Relevant Publications
A. S. Hajo: Entwicklung neuartiger Terahertz-Bauelemente auf der Basis von Nanotechnologien. Darmstadt, Technische Universität Darmstadt, DOI: 10.26083/tuprints-00020269(2022). [Ph.D. Thesis]
A. S. Hajo, S. Preu, Y. Al-Mafrachi and O. Yilmazoglu, "Low-barrier Schottky detector using nanowire contacts for zero-biased THz applications," 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, Netherlands, pp. 1-2, doi: 10.1109/IRMMW-THz50927.2022.9895738 (2022). [Conference Item]
A. S. Hajo, O. Yilmazoglu, A. Dadgar, F. Küppers and T. Kusserow, “Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies,” IEEE Access, vol. 8, pp. 84116-84122, doi: 10.1109/ACCESS.2020.2991309 (2021). [Article]
O. Yilmazoglu and A. S. Hajo, “Gunn-Diode und Verfahren zu deren Herstellung”, PTC: WO 2021/058645 A1 (2021). [Patent]
A. S. Hajo, O. Yilmazoglu, A. Dadgar, F. Küppers and T. Kusserow, “Fabrication and characterization of high power Gallium Nitride based terahertz Gunn diodes,” 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Buffalo, NY, USA, pp. 1-2, doi: 10.1109/IRMMW-THz46771.2020.9370977 (2020). [Conference Item]
A. S. Hajo, O. Yilmazoglu, F. Küppers and T. Kusserow, "Integration and characterisation of Schottky diodes with a pre-amplifier for THz applications," 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Buffalo, NY, USA, pp. 1-2, doi: 10.1109/IRMMW-THz46771.2020.9370830 (2020). [Conference Item]
O. Yilmazoglu and A. S. Hajo, “Galliumnitrid-basierte Gunn-Diode mit Seitenkontaktierung und Laserbestrahlung”, DE: DE102018121672A1 (2020). [Patent]
A. S. Hajo, O. Yilmazoglu, B. Samodi, A. Dadgar, F. Küppers and T. Kussorow, "A new approach to achieve Gunn effect for GaN based THz sources with high power,” 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, pp. 1-2, doi: 10.1109/IRMMW-THz.2019.8873720 (2019). [Conference Item]
A. S. Hajo, O. Yilmazoglu, S. Lu, F. Küppers and T. Kussorow, "Comparison of Metallic NW and Evaporated Contact for THz Detector Modules Based on an InGaAs Schottky diode," 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, pp. 1-2, doi: 10.1109/IRMMW-THz.2019.8874213 (2019).
[Conference Item]
A. S. Hajo, O. Yilmazoglu and F. Küppers, "New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation," 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, Japan, pp. 1-2, doi: 10.1109/IRMMW-THz.2018.8510152 (2018). [Conference Item]
A. S. Hajo, O. Yilmazoglu, A. Dadgar and F. Küppers, “Reliability Improvement of High-Power THz GaN Gunn Sources for Active Imaging Systems,” 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, Japan, pp. 1-2, doi: 10.1109/IRMMW-THz.2018.8510363 (2018). [Conference Item]
O. Yilmazoglu, A. S. Hajo and F. Küppers, "Cabon nanotube yarns as miniature black-body radiator for broadband terahertz emission," 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Cancun, Mexico, pp. 1-2, doi: 10.1109/IRMMW-THz.2017.8066966 (2017). [Conference Item]
A. S. Hajo, O. Yilmazoglu and F. Küppers, "Vertical nanowire contacted THz Schottky detectors based on gallium arsenide for zero-bias operation," 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Cancun, Mexico, pp. 1-2, doi: 10.1109/IRMMW-THz.2017.8067022 (2017). [Conference Item]
Supported by
